Friday, May 29, 2015

High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR02292D, Communication
Xuelei Liang, Yiran Liang, Zhiyong Zhang, Wei Li, Xiaoye Huo, Lian-Mao Peng
Graphene field effect transistors (GFETs) were fabricated on mechanically flexible substrate using chemical vapor deposition graphene. High current density (nearly 200 [small mu ]A/[small mu ]m) with saturation, almost perfect ambipolar electron-hole behavior, high...
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