Ultralow-power Non-volatile Memory Cells based on P(VDF-TrFE) Ferroelectric-gate CMOS Silicon Nanowire Channel Field-Effect Transistors

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR02019K, Paper

Dae Joon Kang, Huynh Van Ngoc, Jae-Hyun Lee, Dongmok Whang
Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In...
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