Nanoscale, 2016, Advance Article
DOI: 10.1039/C5NR08065G, Paper
DOI: 10.1039/C5NR08065G, Paper
Qi Feng, Faguang Yan, Wengang Luo, Kaiyou Wang
Stable retention and a large memory window in charge trap memory devices based on black phosphorus and high-k HfO2.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Stable retention and a large memory window in charge trap memory devices based on black phosphorus and high-k HfO2.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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