Nanoscale, 2016, Advance Article
DOI: 10.1039/C5NR05988G, Paper
DOI: 10.1039/C5NR05988G, Paper
Rajesh Kumar Ulaganathan, Yi-Ying Lu, Chia-Jung Kuo, Srinivasa Reddy Tamalampudi, Raman Sankar, Karunakara Moorthy Boopathi, Ankur Anand, Kanchan Yadav, Roshan Jesus Mathew, Chia-Rung Liu, Fang Cheng Chou, Yit-Tsong Chen
We report a multi-layered GeS nanosheet-based field-effect transistor of very high photoresponsivity, external quantum efficiency, and specific detectivity.
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We report a multi-layered GeS nanosheet-based field-effect transistor of very high photoresponsivity, external quantum efficiency, and specific detectivity.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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