Tuesday, January 12, 2016

Phonon Transport at the Interfaces of Vertically Stacked Graphene and Hexagonal Boron Nitride Heterostructures

Nanoscale, 2016, Accepted Manuscript
DOI: 10.1039/C5NR06818E, Paper
Zhequan Yan, Liang Chen, Mina Yoon, Satish Kumar
Hexagonal boron nitride (h-BN) is a promising substrate for the graphene based nano-electronic devices. We investigate ballistic phonon transport at the interface of vertically stacked graphene and h-BN heterostructures using...
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