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Zhiyong Zhang, Huilong Xu, and Hua Zhong et al.
Top gated graphene field-effect transistors were fabricated using yttrium oxide film as high-κ gate dielectric, and the gate voltage dependent drain current and gate capacitance characteristics were both measured on one graphene device. Based on the two kinds of data sets, we developed a method to ... [Appl. Phys. Lett. 101, 213103 (2012)] published Wed Nov 21, 2012.
Link to full article
Zhiyong Zhang, Huilong Xu, and Hua Zhong et al.
Top gated graphene field-effect transistors were fabricated using yttrium oxide film as high-κ gate dielectric, and the gate voltage dependent drain current and gate capacitance characteristics were both measured on one graphene device. Based on the two kinds of data sets, we developed a method to ... [Appl. Phys. Lett. 101, 213103 (2012)] published Wed Nov 21, 2012.
Link to full article
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