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Stefano Larentis, Babak Fallahazad, and Emanuel Tutuc
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and ... [Appl. Phys. Lett. 101, 223104 (2012)] published Mon Nov 26, 2012.
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Stefano Larentis, Babak Fallahazad, and Emanuel Tutuc
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and ... [Appl. Phys. Lett. 101, 223104 (2012)] published Mon Nov 26, 2012.
Link to full article
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