Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition

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Jiri Thoma, Baolai Liang, and Liam Lewis et al.

Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed togethe ... [Appl. Phys. Lett. 102, 113101 (2013)] published Mon Mar 18, 2013.



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