Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope

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Roland Nowak, Daniel Moraru, and Takeshi Mizuno et al.

Electronic potential measurements performed by low-temperature Kelvin probe force microscopy on silicon-on-insulator lateral nanoscale pn junctions are presented. The electronic potential landscape contains a region of enhanced potential induced by interdiffused dopants with deeper ground-state le ... [Appl. Phys. Lett. 102, 083109 (2013)] published Fri Mar 01, 2013.



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