Monday, March 25, 2013

Efficient electron and hole doping in compositionally abrupt Si/Ge nanowires

Xiao Cheng Zeng






Nanoscale , 2013, Advance Article

DOI: 10.1039/C3NR00563A, Paper

Pengfei Li, Rulong Zhou, Bicai Pan, Xiao Cheng Zeng

Easy injection of high-density free-electron-like (free-hole-like) carriers in P doped Ge/Si (Al or B doped Si/Ge) core/shell nanowires.

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