Wednesday, March 06, 2013

Epitaxial growth of radial Si p-i-n junctions for photovoltaic applications

(author unknown)



Jinkyoung Yoo, Shadi A. Dayeh, and Wei Tang et al.

Achieving high quality radial junctions in nanowire arrays with controlled doping profiles is critical for their potential photovoltaic applications. We present a low temperature epitaxial growth process for silicon radial p-n and p-i-n junction arrays on top-down fabricated nanowires using silane ... [Appl. Phys. Lett. 102, 093113 (2013)] published Wed Mar 06, 2013.



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