Tuesday, March 05, 2013

Room-Temperature Si Etching in NO/F2 Gases and the Investigation of Surface Reaction Mechanisms

Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine and Masaru Hori



TOC Graphic


The Journal of Physical Chemistry C

DOI: 10.1021/jp3119132






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