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Christopher Prohl, Andrea Lenz, and Dominik Roy et al.
In0.25Ga0.75As/GaAs quantum dots grown by metalorganic vapor-phase epitaxy in a GaP matrix have been investigated on the atomic scale using cross-sectional scanning tunneling microscopy. The quantum dots have a truncated pyramidal shape with a reversed cone stoichiometry profile. All deposited ind ... [Appl. Phys. Lett. 102, 123102 (2013)] published Mon Mar 25, 2013.
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Christopher Prohl, Andrea Lenz, and Dominik Roy et al.
In0.25Ga0.75As/GaAs quantum dots grown by metalorganic vapor-phase epitaxy in a GaP matrix have been investigated on the atomic scale using cross-sectional scanning tunneling microscopy. The quantum dots have a truncated pyramidal shape with a reversed cone stoichiometry profile. All deposited ind ... [Appl. Phys. Lett. 102, 123102 (2013)] published Mon Mar 25, 2013.
Link to full article
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