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Qing-Qing Sun, Yong-Jun Li, and Jin-Lan He et al.
The single layer MoS2 is attractive for the use in the next-generation low power nanoelectronic devices because of its intrinsic bandgap compared to graphene. In this work, we investigated the transport property of a p-n junction based on two-dimensional MoS2. The n-type and p-type doping are real ... [Appl. Phys. Lett. 102, 093104 (2013)] published Tue Mar 05, 2013.
Link to full article
Qing-Qing Sun, Yong-Jun Li, and Jin-Lan He et al.
The single layer MoS2 is attractive for the use in the next-generation low power nanoelectronic devices because of its intrinsic bandgap compared to graphene. In this work, we investigated the transport property of a p-n junction based on two-dimensional MoS2. The n-type and p-type doping are real ... [Appl. Phys. Lett. 102, 093104 (2013)] published Tue Mar 05, 2013.
Link to full article
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