Cheul-Ro Lee
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Nanoscale , 2013, Advance Article
DOI: 10.1039/C3NR34245J, Paper
DOI: 10.1039/C3NR34245J, Paper
Ji-Hyeon Park, Min-Hee Kim, Suthan Kissinger, Cheul-Ro Lee
A vertically oriented p-n-junction GaN nanowire array diode is fabricated on Si(111) by a newly developed two-step growth process.
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A vertically oriented p-n-junction GaN nanowire array diode is fabricated on Si(111) by a newly developed two-step growth process.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Link to full article
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