Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric

Wenwu Li, Song-Lin Li, and Katsuyoshi Komatsu et al.

A high-quality HCa2Nb3O10 (HCNO) nanoflake (εr = 9.1) consisting of high-κ perovskite nanosheets is adopted as a gate dielectric for graphene-based electronics. A dual-gated device was physically constructed by directly dry-transferring a 22-nm-thick HCNO nanoflake as a top gate dielectric onto gr ... [Appl. Phys. Lett. 103, 023113 (2013)] published Fri Jul 12, 2013.



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