Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires

Maria M. Koleśnik-Gray, Tarek Lutz, and Gillian Collins et al.

Electrical properties of contact-interfaces in germanium nanowire field effect transistor devices are studied. In contrast to planar bulk devices, it is shown that the active conduction channel and gate length extend between and underneath the contact electrodes. Furthermore, direct scaling of con ... [Appl. Phys. Lett. 103, 153101 (2013)] published Tue Oct 08, 2013.



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