Thursday, June 26, 2014

Crystal structure tuning in GaAs nanowires using HCl




Nanoscale , 2014, 6,8257-8264

DOI: 10.1039/C4NR00991F, Paper

Daniel Jacobsson, Sebastian Lehmann, Kimberly A. Dick

The use of HCl during growth of nanowires presents new possibilities for controlling the growth dynamics and resulting nanowire properties. Here, we demonstrate the realization of wurtzite-zinc blende heterostructures with atomically sharp interfaces achieved only by adding HCl. The change in crystal structure is attributed to a gas-phase reaction between Ga species and HCl.

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