Thursday, June 26, 2014

Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR00978A, Paper

Jingqi Li, Qingxiao Wang, Weisheng Yue, Zaibing Guo, Liang Li, Chao Zhao, Xianbin Wang, Anas I. Abutaha, H. N. Alshareef, Yafei Zhang, X. X. Zhang

Transfer characteristics of the vertical carbon nanotube field-effect transistors depend on the sign of the drain voltage and type of silicon doping.

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