Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR00978A, Paper
DOI: 10.1039/C4NR00978A, Paper
Jingqi Li, Qingxiao Wang, Weisheng Yue, Zaibing Guo, Liang Li, Chao Zhao, Xianbin Wang, Anas I. Abutaha, H. N. Alshareef, Yafei Zhang, X. X. Zhang
Transfer characteristics of the vertical carbon nanotube field-effect transistors depend on the sign of the drain voltage and type of silicon doping.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Transfer characteristics of the vertical carbon nanotube field-effect transistors depend on the sign of the drain voltage and type of silicon doping.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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