Monday, November 03, 2014

Sub-10 nm transparent all-around-gated ambipolar ionic field effect transistor




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR04089A, Paper

Seung-Hyun Lee, Hyomin Lee, Tianguang Jin, Sungmin Park, Byung Jun Yoon, Gun Yong Sung, Ki-Bum Kim, Sung Jae Kim

A versatile ionic field effect transistor (IFET) which has an ambipolar function for manipulating molecules regardless of their polarity was developed for the operation at a wide range of electrolytic concentrations (10-5 M-1 M).

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