Amorphous sub-nanometre Tb-doped SiO x N y /SiO 2 superlattices for optoelectronics

Amorphous sub-nanometre Tb-doped SiO x N y /SiO 2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiO x N y layers and of 0.9 nm thick SiO 2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high temperature of 1000 °C. In addition, transparent indium tin oxide (ITO) electrodes were deposited by electron beam evaporation using a shadow mask approach to allow for the optoelectronic characterization of superlattices. Tb 3+ luminescent spectral features were obtained using three different excitation sources: UV laser excitation (photoluminescence (PL)), under a bias voltage (electroluminescence (EL)) and under a highly energetic electr...

Joan Manel Ramírez, Jacek Wojcik, Yonder Berencén, Alícia Ruiz-Caridad, Sònia Estradé, Francesca Peiró, Peter Mascher and Blas Garrido

Click for full article