(author unknown)
M. H. Kuo, C. C. Wang, and W. T. Lai et al.
An otherwise random, self-assembly of Ge quantum dots (QDs) on Si has been controlled by nano-patterning and oxidation to produce QDs with desired sizes, locations, and depths of penetration into the Si substrate. A heterostructure consisting of a thin amorphous interfacial oxide between the Ge QD ... [Appl. Phys. Lett. 101, 223107 (2012)] published Mon Nov 26, 2012.
Link to full article
M. H. Kuo, C. C. Wang, and W. T. Lai et al.
An otherwise random, self-assembly of Ge quantum dots (QDs) on Si has been controlled by nano-patterning and oxidation to produce QDs with desired sizes, locations, and depths of penetration into the Si substrate. A heterostructure consisting of a thin amorphous interfacial oxide between the Ge QD ... [Appl. Phys. Lett. 101, 223107 (2012)] published Mon Nov 26, 2012.
Link to full article
No comments:
Post a Comment