Friday, November 02, 2012

Influence of p-doping on the temperature dependence of InAs/GaAs quantum dot excited state radiative lifetime

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Edmund Harbord, S. Iwamoto, and Y. Arakawa et al.

The radiative lifetime of the excited state transition of undoped and p-doped InAs/GaAs quantum dots (QDs) is estimated from measurements of time-integrated and time-resolved luminescence from both ground and excited states. The radiative lifetime of the undoped QDs increases from 500 ps at 10 K t ... [Appl. Phys. Lett. 101, 183108 (2012)] published Fri Nov 02, 2012.



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