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Jared J. Hou, Fengyun Wang, and Ning Han et al.
In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In0.7Ga0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage beh ... [Appl. Phys. Lett. 102, 093112 (2013)] published Wed Mar 06, 2013.
Link to full article
Jared J. Hou, Fengyun Wang, and Ning Han et al.
In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In0.7Ga0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage beh ... [Appl. Phys. Lett. 102, 093112 (2013)] published Wed Mar 06, 2013.
Link to full article
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