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M. K. Hudait, Y. Zhu, and D. Maurya et al.
The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the Hf ... [Appl. Phys. Lett. 102, 093109 (2013)] published Wed Mar 06, 2013.
Link to full article
M. K. Hudait, Y. Zhu, and D. Maurya et al.
The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the Hf ... [Appl. Phys. Lett. 102, 093109 (2013)] published Wed Mar 06, 2013.
Link to full article
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