Friday, March 08, 2013

Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

(author unknown)



Motoki Takahashi, Nurrul Syafawati Humam, and Nobuhiro Tsumori et al.

A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence ... [Appl. Phys. Lett. 102, 093120 (2013)] published Fri Mar 08, 2013.



Link to full article

No comments:

Post a Comment