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M. K. Hudait, Y. Zhu, and S. W. Johnston et al.
GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendellösung oscillations. The kinetics of the carrier recombination in Ge/GaA ... [Appl. Phys. Lett. 102, 093119 (2013)] published Fri Mar 08, 2013.
Link to full article
M. K. Hudait, Y. Zhu, and S. W. Johnston et al.
GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendellösung oscillations. The kinetics of the carrier recombination in Ge/GaA ... [Appl. Phys. Lett. 102, 093119 (2013)] published Fri Mar 08, 2013.
Link to full article
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