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Yang-Bo Zhou, Han-Chun Wu, and Da-Peng Yu et al.
We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under ... [Appl. Phys. Lett. 102, 093116 (2013)] published Thu Mar 07, 2013.
Link to full article
Yang-Bo Zhou, Han-Chun Wu, and Da-Peng Yu et al.
We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under ... [Appl. Phys. Lett. 102, 093116 (2013)] published Thu Mar 07, 2013.
Link to full article
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