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C. Petridis, Y.-H. Lin, and K. Savva et al.
We report on post-fabrication, in situ, laser induced reduction of graphene oxide (GO) field effect transistors. Our one-step method is efficient, fast, and elevates the conductivity of GO transistor channels by two orders of magnitude. Compared to other reduction techniques, it is facile and simp ... [Appl. Phys. Lett. 102, 093115 (2013)] published Thu Mar 07, 2013.
Link to full article
C. Petridis, Y.-H. Lin, and K. Savva et al.
We report on post-fabrication, in situ, laser induced reduction of graphene oxide (GO) field effect transistors. Our one-step method is efficient, fast, and elevates the conductivity of GO transistor channels by two orders of magnitude. Compared to other reduction techniques, it is facile and simp ... [Appl. Phys. Lett. 102, 093115 (2013)] published Thu Mar 07, 2013.
Link to full article
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