Friday, September 06, 2013

Controlled and Selective Area Growth of Monolayer Graphene on 4H-SiC Substrate by Electron-Beam-Assisted Rapid Heating

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The Journal of Physical Chemistry C

DOI: 10.1021/jp404483y




P. Dharmaraj, K. Jeganathan, V. Gokulakrishnan, P. Sundara Venkatesh, R. Parameshwari, V. Ramakrishnan, S. Balakumar, K. Asokan and K. Ramamurthi

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