Monday, September 23, 2013

Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

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ACS Nano

DOI: 10.1021/nn403715p




Kyung-Ho Kim, Doo-Seung Um, Hochan Lee, Seongdong Lim, Joonyeon Chang, Hyun Cheol Koo, Min-Wook Oh, Hyunhyub Ko and Hyung-jun Kim

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