Friday, September 20, 2013

Growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE




Nanoscale , 2013, Advance Article

DOI: 10.1039/C3NR03032F, Paper

Sahng-Kyoon Jerng, Kisu Joo, Youngwook Kim, Sang-Moon Yoon, Jae Hong Lee, Miyoung Kim, Jun Sung Kim, Euijoon Yoon, Seung-Hyun Chun, Yong Seung Kim

Topological insulator Bi2 Se3 thin films are grown directly on an oxidized amorphous silicon (SiO2 ) substrate by molecular beam epitaxy using a van der Waals epitaxy method.

To cite this article before page numbers are assigned, use the DOI form of citation above.

The content of this RSS Feed (c) The Royal Society of Chemistry





Click for full article

No comments:

Post a Comment