We show that the growth kinetics of dense arrays of self-induced GaN nanowires involves the exchange of Ga atoms between nanowires: Ga atoms desorbed from the side surfaces of nanowires readsorb on neighboring nanowires. This process favors the growth of shorter nanowires and gives rise to a narro ... [Appl. Phys. Lett. 103, 133105 (2013)] published Tue Sep 24, 2013.
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