Nanoscale , 2013, Accepted Manuscript
DOI: 10.1039/C3NR03579D, Paper
DOI: 10.1039/C3NR03579D, Paper
Umberto Celano, Ludovic Goux, Karl Opsomer, Attilio Belmonte, Martina Iapichino, Christophe Detavernier, Malgorzata Jurczak, Wilfried Vandervorst
In the recent past, filamentary-based resistive switching devices have emerged as predominant candidates for future non-volatile memory storage. Most of the striking characteristics of these devices are still limited by...
The content of this RSS Feed (c) The Royal Society of Chemistry
In the recent past, filamentary-based resistive switching devices have emerged as predominant candidates for future non-volatile memory storage. Most of the striking characteristics of these devices are still limited by...
The content of this RSS Feed (c) The Royal Society of Chemistry
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