Tuesday, September 03, 2013

Switching Mechanism and Reverse Engineering of Low-Power Cu-Based Resistive Switching Devices.

Nanoscale , 2013, Accepted Manuscript

DOI: 10.1039/C3NR03579D, Paper

Umberto Celano, Ludovic Goux, Karl Opsomer, Attilio Belmonte, Martina Iapichino, Christophe Detavernier, Malgorzata Jurczak, Wilfried Vandervorst

In the recent past, filamentary-based resistive switching devices have emerged as predominant candidates for future non-volatile memory storage. Most of the striking characteristics of these devices are still limited by...

The content of this RSS Feed (c) The Royal Society of Chemistry





Click for full article

No comments:

Post a Comment