Vertically aligned nanostructures based on Na-doped ZnO nanorods for wide band gap semiconductor memory applications

Vertically aligned undoped ZnO nanotips, nanotubes and nanorods were synthesized on the top facets of Na-doped ZnO nanorods without catalytic assistance under different growth times in a chemical vapor deposition system. The growth mechanism is discussed. The Na-doped nanorods were grown on a ZnO seed layer on Si. The p-type conductivity of the Na-doped nanorods was studied by temperature-dependent photoluminescence and nanorod back-gated field effect transistor measurements. The undoped nanorods, Na-doped nanorods and undoped seed layer form an n–p–n memory structure. The programming and retention characteristics have been demonstrated.

Jian Huang, Jing Qi, Zonglin Li and Jianlin Liu

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