Tuesday, June 03, 2014

A mechanical and electrical transistor structure (METS) with a sub-2 nm nanogap for effective voltage scaling




Nanoscale , 2014, Advance Article

DOI: 10.1039/C3NR06251A, Communication

Byung-Hyun Lee, Dong-Il Moon, HyunJae Jang, Chang-Hoon Kim, Myeong-Lok Seol, Ji-Min Choi, Dong-Il Lee, Min-Wu Kim, Jun-Bo Yoon, Yang-Kyu Choi

This work using atomic layer deposition a dielectric with high permittivity suggests an effective operation voltage scaling for nanoelectromechanical system based switches.

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