Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization
ACS Nano
DOI: 10.1021/nn502438k
Mykola Telychko, Pingo Mutombo, Martin Ondráček, Prokop Hapala, François C. Bocquet, Jindřich Kolorenč, Martin Vondráček, Pavel Jelínek and Martin Švec
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