Wednesday, June 04, 2014

Asymmetrically-gated graphene self-switching diodes as negative differential resistance devices




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR00112E, Paper

Feras Al-Dirini, Faruque M. Hossain, Ampalavanapillai Nirmalathas, Efstratios Skafidas

In an asymmetrically-gated graphene self-switching diode the quantum tunnelling current is used to control a much larger channel conduction current, resulting in a very pronounced NDR effect.

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