Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR01084A, Paper
DOI: 10.1039/C4NR01084A, Paper
S. J. Rezvani, N. Pinto, L. Boarino, F. Celegato, L. Favre, I. Berbezier
We report the geometry modifications of VLS grown Ge nanowires resulting from a change in adatoms' diffusion length and direction, caused by the deposition flux.
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We report the geometry modifications of VLS grown Ge nanowires resulting from a change in adatoms' diffusion length and direction, caused by the deposition flux.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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