Monday, June 02, 2014

Diffusion induced effects on geometry of Ge nanowires




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR01084A, Paper

S. J. Rezvani, N. Pinto, L. Boarino, F. Celegato, L. Favre, I. Berbezier

We report the geometry modifications of VLS grown Ge nanowires resulting from a change in adatoms' diffusion length and direction, caused by the deposition flux.

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