Friday, June 06, 2014

Hole Carriers Doping Effect on the Metal–Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films

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The Journal of Physical Chemistry C

DOI: 10.1021/jp502000s




Wenhua Zhang, Kai Wang, Lele Fan, Lingyun Liu, Panpan Guo, Chongwen Zou, Jiaou Wang, Haijie Qian, Kurash Ibrahim, Wensheng Yan, Faqiang Xu and Ziyu Wu

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