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Hema C. P. Movva, Michael E. Ramón, and Chris M. Corbet et al.
We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devi ... [Appl. Phys. Lett. 101, 183113 (2012)] published Fri Nov 02, 2012.
Link to full article
Hema C. P. Movva, Michael E. Ramón, and Chris M. Corbet et al.
We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devi ... [Appl. Phys. Lett. 101, 183113 (2012)] published Fri Nov 02, 2012.
Link to full article
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