Nanoscale , 2013, Advance Article
DOI: 10.1039/C3NR03080F, Paper
DOI: 10.1039/C3NR03080F, Paper
Zai-xing Yang, Ning Han, Fengyun Wang, Ho-Yuen Cheung, Xiaoling Shi, SenPo Yip, TakFu Hung, Min Hyung Lee, Chun-Yuen Wong, Johnny C. Ho
A simple and effective in situ doping technique in the chemical vapor deposition of InSb nanowires on amorphous substrates employing carbon dopants is demonstrated. The versatility of this approach is further illustrated by the fabrication of high-performance p-channel nanowire field-effect-transistors for the future CMOS electronics.
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A simple and effective in situ doping technique in the chemical vapor deposition of InSb nanowires on amorphous substrates employing carbon dopants is demonstrated. The versatility of this approach is further illustrated by the fabrication of high-performance p-channel nanowire field-effect-transistors for the future CMOS electronics.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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