Thursday, May 30, 2013

Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

(author unknown)



F. González-Posada, R. Songmuang, and M. Den Hertog et al.

In this work, we compare the photodetector performance of single nearly defect-free undoped and n-i-n GaN nanowires (NWs). Undoped NWs present a dark current three orders of magnitude lower than n-i-n structures, about ten times lower gain, and a strong dependence of the measurement environment. I ... [Appl. Phys. Lett. 102, 213113 (2013)] published Thu May 30, 2013.



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