Wednesday, May 29, 2013

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

(author unknown)



D. R. Ward, D. E. Savage, and M. G. Lagally et al.

Measuring multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic m ... [Appl. Phys. Lett. 102, 213107 (2013)] published Wed May 29, 2013.



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