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V. Darakchieva, A. Boosalis, and A. A. Zakharov et al.
Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it i ... [Appl. Phys. Lett. 102, 213116 (2013)] published Fri May 31, 2013.
Link to full article
V. Darakchieva, A. Boosalis, and A. A. Zakharov et al.
Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it i ... [Appl. Phys. Lett. 102, 213116 (2013)] published Fri May 31, 2013.
Link to full article
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