A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope

Nanoscale , 2013, Advance Article

DOI: 10.1039/C3NR02552G, Communication

Jae-Hyun Lee, Byung-Sung Kim, Soon-Hyung Choi, Yamujin Jang, Sung Woo Hwang, Dongmok Whang

We demonstrate a facile fabrication of high performance gate-all-around (GAA) field effect transistors (FETs) based on concentric Si-SiO₂ /N⁺⁺ Si core-multi-shell nanowires.

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