An all-solid-state electric-double-layer transistor (EDLT) with a Gd-doped CeO2 (GDC) oxide ion conductor/SrTiO3 (STO) insulator structure has been developed. At 473 K, the drain current of the EDLT was well controlled, from less than nA order to μA order, by electrostatic carrier doping at the GD ... [Appl. Phys. Lett. 103, 073110 (2013)] published Tue Aug 13, 2013.
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