Tuesday, August 27, 2013

Current Transport Mechanism at Metal-Semiconductor Nanoscale Interfaces Based on Ultrahigh Density Arrays of p-type NiO Nano-Pillars

Nanoscale , 2013, Accepted Manuscript

DOI: 10.1039/C3NR03803C, Paper

Suman Nandy, Goncalo nandy.suman@gmail.com Goncalves, Joana Vaz Pinto, Tito Busani, Vitor Figueiredo, Luis Pereira, Rodrigo Martins, Elvira Fortunato

The present work is focused on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs...

The content of this RSS Feed (c) The Royal Society of Chemistry





Click for full article

No comments:

Post a Comment