Direct observation of interface and nanoscale compositional modulation in ternary III-As heterostructure nanowires

Sriram Venkatesan, Morten H. Madsen, and Herbert Schmid et al.

Straight, axial InAs nanowire with multiple segments of GaxIn1−xAs was grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveals the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change i ... [Appl. Phys. Lett. 103, 063106 (2013)] published Thu Aug 08, 2013.



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