Edge state in epitaxial nanographene on 3C-SiC(100)/Si(100) substrate

E. Velez-Fort, M. G. Silly, and R. Belkhou et al.

Epitaxial nanographene grown on SiC substrate is of great interest for electronic and optoelectronic applications. The shape and the size of nanographene dictates its electrical, optical, magnetic, and chemical properties including possible edge states and quantum confinement. Here, we report the ... [Appl. Phys. Lett. 103, 083101 (2013)] published Mon Aug 19, 2013.



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